JPS613039B2 - - Google Patents
Info
- Publication number
- JPS613039B2 JPS613039B2 JP14355282A JP14355282A JPS613039B2 JP S613039 B2 JPS613039 B2 JP S613039B2 JP 14355282 A JP14355282 A JP 14355282A JP 14355282 A JP14355282 A JP 14355282A JP S613039 B2 JPS613039 B2 JP S613039B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5692—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency read-only digital stores using storage elements with more than two stable states
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/317,721 US4462088A (en) | 1981-11-03 | 1981-11-03 | Array design using a four state cell for double density |
| US317721 | 1981-11-03 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5880194A JPS5880194A (ja) | 1983-05-14 |
| JPS613039B2 true JPS613039B2 (en]) | 1986-01-29 |
Family
ID=23234978
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57143552A Granted JPS5880194A (ja) | 1981-11-03 | 1982-08-20 | 読取専用記憶装置 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US4462088A (en]) |
| EP (1) | EP0078439A3 (en]) |
| JP (1) | JPS5880194A (en]) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0169046U (en]) * | 1987-10-28 | 1989-05-08 | ||
| JPH0368134U (en]) * | 1989-11-08 | 1991-07-04 |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60173792A (ja) * | 1984-01-31 | 1985-09-07 | Fujitsu Ltd | 信号選択回路 |
| US4646266A (en) * | 1984-09-28 | 1987-02-24 | Energy Conversion Devices, Inc. | Programmable semiconductor structures and methods for using the same |
| DE3537575A1 (de) * | 1985-10-22 | 1987-04-23 | Conradty Nuernberg | Inerte verbundelektrode, insbesondere anode fuer die schmelzflusselektrolyse |
| DK156028C (da) * | 1986-05-16 | 1989-11-06 | Testa Lab A S | Aspirator |
| US4805142A (en) * | 1986-07-01 | 1989-02-14 | International Business Machines Corporation | Multiple ROM data state, read/write memory cell |
| US5367208A (en) * | 1986-09-19 | 1994-11-22 | Actel Corporation | Reconfigurable programmable interconnect architecture |
| US5299150A (en) * | 1989-01-10 | 1994-03-29 | Actel Corporation | Circuit for preventing false programming of anti-fuse elements |
| IL96808A (en) | 1990-04-18 | 1996-03-31 | Rambus Inc | Introductory / Origin Circuit Agreed Using High-Performance Brokerage |
| US6002614A (en) * | 1991-02-08 | 1999-12-14 | Btg International Inc. | Memory apparatus including programmable non-volatile multi-bit memory cell, and apparatus and method for demarcating memory states of the cell |
| US5218569A (en) | 1991-02-08 | 1993-06-08 | Banks Gerald J | Electrically alterable non-volatile memory with n-bits per memory cell |
| GB9113795D0 (en) * | 1991-06-26 | 1991-08-14 | Philips Electronic Associated | Thin-film rom devices and their manufacture |
| US6353554B1 (en) | 1995-02-27 | 2002-03-05 | Btg International Inc. | Memory apparatus including programmable non-volatile multi-bit memory cell, and apparatus and method for demarcating memory states of the cell |
| DE69626631T2 (de) * | 1996-06-05 | 2003-11-06 | Stmicroelectronics S.R.L., Agrate Brianza | Seitenmodusspeicher mit Mehrpegelspeicherzellen |
| TW306005B (en) * | 1996-11-22 | 1997-05-21 | United Microelectronics Corp | Decoding method of diode-type read only memory array |
| US11342469B2 (en) * | 2018-07-09 | 2022-05-24 | Macom Technology Solutions Holdings, Inc. | Vertical etch heterolithic integrated circuit devices |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3423646A (en) * | 1965-02-01 | 1969-01-21 | Sperry Rand Corp | Computer logic device consisting of an array of tunneling diodes,isolators and short circuits |
| US3484762A (en) * | 1966-06-27 | 1969-12-16 | Ncr Co | Two element per bit memory having nondestructive read out and ternary storage capability |
| US3656117A (en) * | 1971-02-05 | 1972-04-11 | Ibm | Ternary read-only memory |
| CH533707A (fr) * | 1971-07-01 | 1973-02-15 | Bonneterie S A Et | Dispositif pour la programmation d'informations destinées à la commande sélective d'éléments de tricotage de métiers à tricoter |
| US4174521A (en) * | 1978-04-06 | 1979-11-13 | Harris Corporation | PROM electrically written by solid phase epitaxy |
| US4202044A (en) * | 1978-06-13 | 1980-05-06 | International Business Machines Corporation | Quaternary FET read only memory |
| US4192014A (en) * | 1978-11-20 | 1980-03-04 | Ncr Corporation | ROM memory cell with 2n FET channel widths |
-
1981
- 1981-11-03 US US06/317,721 patent/US4462088A/en not_active Expired - Lifetime
-
1982
- 1982-08-20 JP JP57143552A patent/JPS5880194A/ja active Granted
- 1982-10-18 EP EP82109608A patent/EP0078439A3/en not_active Ceased
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0169046U (en]) * | 1987-10-28 | 1989-05-08 | ||
| JPH0368134U (en]) * | 1989-11-08 | 1991-07-04 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5880194A (ja) | 1983-05-14 |
| EP0078439A3 (en) | 1984-10-03 |
| EP0078439A2 (en) | 1983-05-11 |
| US4462088A (en) | 1984-07-24 |